SUBSTITUTES
Alternative producers in overlapping segments/subsegments — ranked by lower chokepoint score. Sanctioned peers sink to the bottom.
ChangXin Memory (CXMT)
Keys: memory · memory/dram
- Micron TechnologyUnited StatesOverlap: memory/dram
- Nanya TechnologyTaiwanOverlap: memory/dram
- Winbond ElectronicsTaiwanOverlap: memory/dram
- Samsung ElectronicsSouth KoreaOverlap: memory/dram
- SK hynixSouth KoreaOverlap: memory/dram
- Everspin TechnologiesUnited StatesOverlap: memory
- Integrated Silicon SolutionUnited StatesOverlap: memory
- NetlistUnited StatesOverlap: memory
- Weebit NanoIsraelOverlap: memory
- Ferroelectric Memory CompanyGermanyOverlap: memory
- SanDiskUnited StatesOverlap: memory
- SolidigmUnited StatesOverlap: memory
| Candidate | Country | Score | Verdict | Overlap | |
|---|---|---|---|---|---|
| Micron Technology | United States | 45 | WATCH | memory/dram | Compare › |
| Nanya Technology | Taiwan | 45 | WATCH | memory/dram | Compare › |
| Winbond Electronics | Taiwan | 45 | WATCH | memory/dram | Compare › |
| Samsung Electronics | South Korea | 47 | WATCH | memory/dram | Compare › |
| SK hynix | South Korea | 47 | WATCH | memory/dram | Compare › |
| Everspin Technologies | United States | 24 | CLEAR | memory | Compare › |
| Integrated Silicon Solution | United States | 24 | CLEAR | memory | Compare › |
| Netlist | United States | 28 | CLEAR | memory | Compare › |
| Weebit Nano | Israel | 28 | CLEAR | memory | Compare › |
| Ferroelectric Memory Company | Germany | 28 | CLEAR | memory | Compare › |
| SanDisk | United States | 32 | CLEAR | memory | Compare › |
| Solidigm | United States | 32 | CLEAR | memory | Compare › |